Due to the increasing complexity of semiconductor device structures, there is a growing demand for heat-treatment processes that target the local surface layer of the device. Our Laser Annealing system meets such demands, which are now mainly used for the mass production of high-performance image sensors. We are also engaging in R&D activities in order to expand the application of our system.
Simultaneous shallow and deep areas activation
(Ion implantation condition: P/750 keV, B/40 keV)
Only deep-area activation
(Ion implantation condition: P/3 MeV)
We have sold the system used for an activation process to a semiconductor manufacturing company.