™ MLA
The Micro Laser Annealing (µLA) system irradiates a microbeam controlled area by a mask pattern to a specific position on the substrate. With the µLA system, thin films of minute area in the micro-meter order can be crystallized, activated, made highly dielectric, etc. without affecting the base substrate with heat.
It is used in semiconductor mass-production factories.
| Workpiece size | 6 inch, 8 inch | |
|---|---|---|
| Positioning accuracy | ±5 µm | |
| Laser | Wavelength | 248 nm |
| Pulse width | 20 ns | |
| Power | 30 W | |
| Process throughput | 3 min / wafer (6 inch) | |
| Irradiation | Mask Projection, Top flat beam Min Sq 10 µm / Max Sq 2.4 mm Several pattern on 9 inch Mask |
|
| System dimensions | W 3200 x D 4000 x H 2500 (With automatic wafer handling) |
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*YIELDSCAN: Japanese Trademark Registration number 6553271
