Laser Annealing System for Silicidation | JSW Aktina System Co., Ltd.

The Alloying Laser Annealing system is designed for silicidation by processing metal films deposited on SiC wafers through laser irradiation.
The formation of a silicide layer is a necessary technology for semiconductor device manufacturing.
It has become an essential solution for advancing the energy efficiency and miniaturization of power semiconductors.

Features

Applicable Fields and Uses

Application: Silicidation, Activation
Industry: Power semiconductor (xEV, Data Center, Inverter, etc.)

Sales Records

Our system has been deployed with custom specifications for a wide range of users worldwide.

Specification

Laser	Wavelength	248 nm, 308 nm
Frequency	300 Hz
Pulse width	30 ns (Typical value)
Optical system	Beam size	20-200 mm
Maximum energy density	300-4,000 mJ/cm²
Stage	Scanning speed	3-150 mm/s
Productivity	Throughput	20 K sheets/month (@ 8 inch)

Laser

Wavelength

248 nm, 308 nm

Frequency

300 Hz

Pulse width

30 ns (Typical value)

Optical system

Beam size

20-200 mm

Maximum energy density

300-4,000 mJ/cm²

Stage

Scanning speed

3-150 mm/s

Productivity

Throughput

20 K sheets/month (@ 8 inch)

YIELDSCAN

High Productivity Achieved Through Excimer Laser and Proprietary Transfer System
By adopting a high-power excimer laser and a top-flat beam profile, the system offers higher processing performance than a solid-state laser. In addition, the proprietary wafer transfer system has been developed to minimize process wait times during wafer transferring, enabling significantly enhanced productivity.
Damage-Free Laser Processing for Wafer Device Surface
Excimer laser annealing systems typically utilize UV or green wavelengths. UV beam provides higher absorption in metal films compared to green beam, enabling more efficient annealing. In addition, the use of a 30-nanosecond pulse laser minimizes thermal impact on metal patterns and other structures on the non-irradiated surfaces, effectively reducing heat transfer to the device surface even with high thermal conductivity substrates such as SiC.
Fume Processing Function generated by Laser Irradiation
When the wafer is irradiated with a laser, fumes containing silicon, carbon, and metal film components are generated and tend to disperse around the irradiation area. These fumes can contaminate the interior of the chamber, potentially leading to equipment and instrument malfunctions, or equipment maintenance may be required at shorter intervals than usual. We have developed the technology that controls the airflow around the irradiation zone to effectively reduce fume dispersion and minimize contamination.